super fast recovery diode RF1005TF6S ? series ? dimensions (unit : mm) ? structure standard fast recovery ? applications general rectification ? features 1)single type.(to-220) 2)high switching speed ? construction silicon epitaxial planer ? absolute maximum ratings (tc=25 ? c) symbol v rm v r average rectified forward current io tj tstg ? electrical characteristics (tj=25 ? c) symbol forward voltage v f reverse current i r reverse recovery time(*) trr thermal resistance(*) rth(j-c) (*) : design assurance without measurement. 150 ? 55 to ? 150 junction temperature storage temperature v r =600v - 1.4 parameter min. typ. conditions i f =10a 1.7 - 0.05 10 i f =0.5a,i r =1a,irr=0.25i r junction to case -3040 - - 3.5 unit one cycle peak value, tj=25 ? c forward current surge peak i fsm 100 a 60hz half sin wave, non-repetitive max. ? c ? c paramete r conditions limits unit repetitive peak reverse voltage duty ? 0.5 600 v reverse voltage direct voltage 600 v 60hz half sin wave, resistance load, tc=78 ? c 10 a v a ns ? c/ w (1) (3) manufacture year manufacture week rohm : to220nfm (1) (3) +0.3 ?0.1 +0.4 ?0.2 +0.1 ?0.05 0.62 2.6 +0.2 ?0.1 +0.3 ?0.1 0.5 2.54 0.5 3.2 10 4.5 2.8 0.2 2.54 0.76 1.12 1.02 0.5 14 15 0.5 12 0.2 8 1.6max 0.2 2.3 0.3 1/3 2011.05 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RF1005TF6S ? electrical characteristics curves 10 100 1000 0 5 10 15 20 25 30 200 220 240 260 280 300 ave : 270.6pf ta=25 f=1mhz v r =0v n=10pcs 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 rth(j-c) 10 100 1000 110100 time i fsm 0 5 10 15 20 25 30 35 40 ave : 29.0ns t =25 ? c i f =0.5a i r =1a irr=0.25i r n=10pcs 0 50 100 150 200 250 ave : 192a 8.3ms i fsm 1cyc 0.1 1 10 100 0 500 1000 1500 2000 2500 3000 1 10 100 forward voltage : v f (mv) v f -i f characteristics forward current : i f (a) reverse current : i r (na) reverse voltage : v r (v) v r -i r characteristics capacitance between terminals : ct(pf) reverse voltage : v r (v) v r -ct characteristics v f dispersion map forward voltage : v f (mv) reverse current : i r (na) i r dispersion map capacitance between terminals : ct(pf) ct dispersion map i fsm disresion map its ability of peak surge forward current : i fsm (a) peak surge forward current : i fsm (a) number of cycles i fsm -cycle characteristics peak surge forward current : i fsm (a) time : t(ms) i fsm -t characteristics time : t(s) rth-t characteristics transient thaermal impedance:rth ( ? c/w) trr dispersion map reverse recovery time : trr(ns) 1 10 100 1000 10000 100000 0 50 100 150 200 250 300 350 tj=125 ? c tj=25 ? c tj=150 ? c tj=75 ? c f=1mhz tj=25 ? c t =25 ? c v r =600v n=20pcs ave : 40.6na 1100 1200 1300 1400 ave : 1268mv t =25 ? c i f =10a n=20pcs 1 10 100 1000 110100 8.3ms i fsm 1cyc. 8.3ms electrostatic discharge test esd(kv) esd dispersion map 0 5 10 15 20 25 30 c=200pf r=0 ? no break at 30kv c=100pf r=1.5k ? ave 20.7kv tj=125 ? c tj=25 ? c tj=150 ? c tj=75 ? c 2/3 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RF1005TF6S 0 2 4 6 8 10 12 14 16 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d = 0.05 half sin wave d=0.8 forward power dissipation : pf(w) average rectified forward current : io(a) io-pf characteristics average rectified forward current : io(a) case temparature : tc( ? c) derating curve ? (io-tc) t tj=150 ? c d=t/t t v r io v r =480v 0a 0v 0 5 10 15 20 25 30 35 0 3 6 9 12 15 18 d.c. d = 0.5 d=0.2 d=0.1 d= 0 . 0 half sin wave d=0.8 3/3 2011.05 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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